to our customers, old company name in catalogs and other documents on april 1 st , 2010, nec electronics corporation merged with renesas technology corporation, and renesas electronics corporation took over all the business of both companies. therefore, although the old company name remains in this document, it is a valid renesas electronics document. we appreciate your understanding. renesas electronics website: http://www.renesas.com april 1 st , 2010 renesas electronics corporation issued by: renesas electronics corporation ( http://www.renesas.com ) send any inquiries to http://www.renesas.com/inquiry .
notice 1. all information included in this document is current as of th e date this document is issued. such information, however, is subject to change without any prior notice. before purchasing or using any renesas electronics products listed herein, please confirm the latest product information with a renesas electronics sales office. also, please pay regular and careful attention to additional and different information to be disclosed by renesas electronics such as that disclosed through our website. 2. renesas electronics does not assume any liability for infringement of patents, copyrights, or other intellectual property ri ghts of third parties by or arising from the use of renesas electronics products or technical information described in this document . no license, express, implied or otherwise, is granted hereby under any patents, copyrights or other intellectual property right s of renesas electronics or others. 3. you should not alter, modify, copy, or otherwise misappropriate any renesas electronics product, whether in whole or in part . 4. descriptions of circuits, software and other related information in this document are provided only to illustrate the operat ion of semiconductor products and application examples. you are fully responsible for the incorporation of these circuits, software, and information in the design of your equipment. renesas electronics assumes no responsibility for any losses incurred by you or third parties arising from the use of these circuits, software, or information. 5. when exporting the products or technology described in this document, you should comply with the applicable export control laws and regulations and follow the procedures required by such laws and regulations. you should not use renesas electronics products or the technology de scribed in this document for any purpose re lating to military applications or use by the military, including but not limited to the development of weapons of mass destruction. renesas electronics products and technology may not be used for or incorporated into any products or systems whose manufacture, use, or sale is prohibited under any applicable domestic or foreign laws or regulations. 6. renesas electronics has used reasonable care in preparing the information included in this document, but renesas electronics does not warrant that such information is error free. renesas electronics assumes no liability whatsoever for any damages incurred by you resulting from errors in or om issions from the information included herein. 7. renesas electronics products are classified according to the following three quality grades: ?standard?, ?high quality?, an d ?specific?. the recommended applications for each renesas electronics product depends on the product?s quality grade, as indicated below. you must check the quality grade of each renesas electronics product before using it in a particular application. you may not use any renesas electronics product for any application categorized as ?specific? without the prior written consent of renesas electronics. further, you may not use any renesas electronics product for any application for which it is not intended without the prior written consent of renesas electronics. renesas electronics shall not be in any way liable for any damages or losses incurred by you or third parties arising from the use of any renesas electronics product for a n application categorized as ?specific? or for which the product is not intended where you have failed to obtain the prior writte n consent of renesas electronics. the quality grade of each renesas electronics product is ?standard? unless otherwise expressly specified in a renesas electronics data sheets or data books, etc. ?standard?: computers; office equipment; communications equipment; test and measurement equipment; audio and visual equipment; home electronic appliances; machine tools; personal electronic equipment; and industrial robots. ?high quality?: transportation equipment (automobiles, trains, ship s, etc.); traffic control systems; anti-disaster systems; an ti- crime systems; safety equipment; and medical equipment not specifically designed for life support. ?specific?: aircraft; aerospace equipment; submersible repeaters; nuclear reactor control systems; medical equipment or systems for life support (e.g. artificial life support devices or systems), surgical implantations, or healthcare intervention (e.g. excision, etc.), and any other applications or purposes that pose a direct threat to human life. 8. you should use the renesas electronics products described in this document within the range specified by renesas electronics , especially with respect to the maximum rating, operating supply voltage range, movement power voltage range, heat radiation characteristics, installation and other product characteristics. renesas electronics shall have no liability for malfunctions o r damages arising out of the use of renesas electronics products beyond such specified ranges. 9. although renesas electronics endeavors to improve the quality and reliability of its products, semiconductor products have specific characteristics such as the occurrence of failure at a certain rate and malfunctions under certain use conditions. fur ther, renesas electronics products are not subject to radiation resistance design. please be sure to implement safety measures to guard them against the possibility of physical injury, and injury or damage caused by fire in the event of the failure of a renesas electronics product, such as safety design for hardware and software including but not limited to redundancy, fire control and malfunction prevention, appropriate treatment for aging degradation or any other appropriate measures. because the evaluation of microcomputer software alone is very difficult, please evaluate the safety of the final products or system manufactured by you. 10. please contact a renesas electronics sales office for details as to environmental matters such as the environmental compatibility of each renesas electronics product. please use re nesas electronics products in compliance with all applicable laws and regulations that regulate the inclusion or use of c ontrolled substances, including without limitation, the eu rohs directive. renesas electronics assumes no liability for damages or losses occurring as a result of your noncompliance with applicable laws and regulations. 11. this document may not be reproduced or duplicated, in any fo rm, in whole or in part, without prior written consent of renes as electronics. 12. please contact a renesas electronics sales office if you have any questions regarding the information contained in this document or renesas electronics products, or if you have any other inquiries. (note 1) ?renesas electronics? as used in this document means renesas electronics corporation and also includes its majority- owned subsidiaries. (note 2) ?renesas electronics product(s)? means any product developed or manufactured by or for renesas electronics.
renesas lsis 262144-bit (32768-word by 8-bit) cmos static ram m5m5256dfp,vp-55ll,-70ll, -70lli, -55xl,-70xl package ? single +5v power supply ? no clocks, no refresh ? data-hold on +2.0v power supply ? directly ttl compatible : all inputs and outputs ? three-state outputs : or-tie capability ? /oe prevents data contention in the i/o bus ? common data i/o ? battery backup capability ? low stand-by current .......... 0.05a(typ.) application small capacity memory units description the m5m5256dfp,vp is 262,144-bit cmos static rams organized as 32,768-words by 8-bits which is fabricated using high-performance 3 polysilicon cmos technology. the use of resistive load nmos cells and cmos periphery results in a high density and low power static ram. stand-by current is small enough for battery back-up application. it is ideal for the memory systems which require simple interface. especially the m5m5256dvp are packaged in a 28-pin thin small outline package. feature pin configuration (top view) 1 20a (vcc=5.5v) (vcc=5.5v) 5a (max) stand-by (max) active (max) power supplycurrent type access time 50ma m5m5256dfp,vp-55ll m5m5256dfp,vp-70ll 55ns 70ns m5m5256dfp,vp-55xl m5m5256dfp,vp-70xl 55ns 70ns (vcc=3.0v, typical) 0.05a (vcc=5.5v) outline 28p2c-a (vp) outline 28p2w-c (fp) m5m5256dfp : 28 pin 450 mil sop m5m5256dvp : 28pin 8 x 13.4 mm tsop 2 oprating temperature m5m5256dfp,vp-70lli 70ns 0~70 c -40~85 c 0~70 c 40a (vcc=5.5v) a14 a12 a6 a5 a4 a3 a2 a1 a0 a7 dq1 dq2 dq3 gnd vcc a13 a8 a9 a11 a10 dq8 dq7 dq6 dq5 dq4 /w /oe /s 28 26 25 24 23 21 18 17 16 15 27 22 20 19 1 2 4 5 6 7 8 9 10 3 11 12 13 14 m5m5256dvp a14 a12 a6 a5 a4 a3 a7 a2 a1 a0 dq1 dq2 dq3 gnd vcc a13 a8 a9 a11 /w /oe a10 dq7 dq6 dq5 dq4 /s dq8 8 9 10 11 12 13 14 21 18 17 16 15 20 19 1 2 4 5 6 7 3 23 22 24 25 26 27 28
renesas lsis 262144-bit (32768-word by 8-bit) cmos static ram m5m5256dfp,vp-55ll,-70ll, -70lli, -55xl,-70xl function function table the operation mode of the m5m5256dfp,vp is determined by a combination of the device control inputs /s, /w and /oe. each mode is summarized in the function table. a write cycle is executed whenever the low level /w overlaps with the low level /s. the address must be set up before the write cycle and must be stable during the entire cycle. the data is latched into a cell on the trailing edge of /w, /s, whichever occurs first, requiring the set- up and hold time relative to these edge to be maintained. the output enable /oe directly controls the output stage. setting the /oe at a high level,the output stage is in a high-impedance state, and the data bus contention problem in the write cycle is eliminated. mode dq icc /s /w /oe non selection write read stand-by active active active high-impedance d in d out x x l l l l x l h h h h high-impedance 2 a read cycle is executed by setting /w at a high level and /oe at a low level while /s are in an active state. when setting /s at a high level, the chip is in a non- selectable mode in which both reading and writing are disabled. in this mode, the output stage is in a high- impedance state, allowing or-tie with other chips and memory expansion by /s. the power supply current is reduced as low as the stand-by current which is specified as icc3 or icc4, and the memory data can be held at +2v power supply, enabling battery back-up operation during power failure or power-down operation in the non- selected mode. vcc (5v) gnd (0v) 27 20 22 2 3 4 6 5 7 25 26 1 8 9 10 21 23 24 2 12 11 13 15 16 17 18 19 (512 rows x 512 columns) 32768 word x 8bit generator clock a 14 a 13 a 8 a 12 a 6 a 7 a 10 a 0 a 1 a 2 a 3 a 4 a 5 a 11 a 9 /w /oe /s 28 14 dq8 dq7 dq6 dq5 dq4 dq3 dq2 dq1 address input data i/o write control input output enable input chip select input block diagram note ? "h" and "l" in this table mean vih and vil, respectively. ? "x" in this table should be "h" or "l".
renesas lsis 262144-bit (32768-word by 8-bit) cmos static ram m5m5256dfp,vp-55ll,-70ll, -70lli, -55xl,-70xl 3 absolute maximum ratings capacitance ( vcc=5v10%, unless otherwise noted) symbol parameter test conditions pf pf unit max 6 8 typ min limits v i =gnd, v i =25mvrms, f=1mhz v o =gnd,v o =25mvrms, f=1mhz input capacitance output capacitance c i c o dc electrical characteristics ( vcc=5v10%, unless otherwise noted) symbol parameter v v v limits test conditions unit v note 0: direction for current flowing into an ic is positive (no mark). 1: typical value is one at ta = 25c. 2: c i , c o are periodically sampled and are not 100% tested. ma ma v active supply current (ac, mos level ) icc 1 icc 2 stand-by current icc 4 v ih high-level input voltage v il low-level input voltage i o output current in off-state icc 3 stand-by current v oh1 high-level output voltage 1 i oh =-1ma v oh2 high-level output voltage 2 i oh =-0.1ma v ol low-level output voltage i ol =2ma i i input current v i =0 ~ vcc vcc +0.3 0.8 2.2 -0.3* 2.4 3 0.4 2 vcc -0.5 1 40 25 -ll,-lli -xl max typ min parameter supply voltage input voltage output voltage power dissipation operating temperature storage temperature unit v v v mw conditions with respect to gnd ta=25 c 700 0~70 -65~150 ratings symbol vcc v i v o p d t opr t stg -0.3 * ~7.0 -0.3 * ~vcc+0.3 0~vcc (max 7.0) /s=v ih ,other inputs=0 ~ vcc /s>vcc-0.2v, other inputs=0~vcc /s=v ih or or /oe=v ih , v i/o =0 ~ vcc 70ns 45 30 55ns ma 45 25 /s=v il , 70ns 50 30 55ns active supply current (ac, ttl level ) c 1 * -3.0v in case of ac ( pulse width < 30ns ) _ /s<0.2v, _ * -3.0v in case of ac ( pulse width < 30ns ) _ _ c -ll,-xl -lli -40~85 other inputs<0.2v or >vcc-0.2v output-open output-open other inputs=v ih or v il ~25 c 1mhz 1mhz a a a 0.4 6 -ll,-lli -xl ~40 c 1.2 20 -lli -xl ~70 c 5 ~85 c -ll,-lli 40 0.1 4 2 8 4
renesas lsis 262144-bit (32768-word by 8-bit) cmos static ram m5m5256dfp,vp-55ll,-70ll, -70lli, -55xl,-70xl 4 (1) read cycle (2) write cycle symbol parameter t cr read cycle time address access time unit ns ns ns ns ns ns ns ns ns limits t a (s) t a (oe) t dis (s) t dis (oe) t en (s) t en (oe) t v (a) t a (a) -70ll,-70lli, - 70 xl ac electrical characteristics ( vcc=5v10%, unless otherwise noted ) chip select access time output enable access time output disable time after /s high output disable time after /oe high output enable time after /s low output enable time after /oe low data valid time after address max min 55 5 5 10 min 55 55 30 20 20 max -55ll, 55xl 70 5 5 10 70 70 35 25 25 symbol parameter unit ns ns ns ns ns ns ns ns ns ns ns ns limits write cycle time write pulse width address setup time address setup time with respect to /w high chip select setup time data setup time data hold time write recovery time output disable time from /w low output disable time from /oe high output enable time from /w high output enable time from /oe low max min -70ll,-70lli, -70 xl -55ll, -55xl max min t cw t w (w) t su (a) t su (a-wh) t su (s) t su (d) t h (d) t rec (w) t dis (w) t dis (oe) t en (w) t en (oe) 55 40 0 50 50 25 0 0 5 5 20 20 70 50 0 65 65 30 0 0 5 5 25 25
renesas lsis 262144-bit (32768-word by 8-bit) cmos static ram m5m5256dfp,vp-55ll,-70ll, -70lli, -55xl,-70xl t en (w) 5 read cycle write cycle (/w control mode) (3) timing diagrams data valid (note 3) (note 3) t a (a) t a (s) t v (a) t dis (s) t a (oe) t en (oe) t dis (oe) (note 3) (note 3) t cr t h (d) t su (d) dq 1~8 /s t su (s) /oe t su (a-wh) t en (oe) t dis (oe) (note 3) (note 3) /w t w (w) t rec (w) t su (a) t dis (w) t cw t en (s) /w = "h" level a 0~14 dq 1~8 /s /oe a 0~14 data in stable (note 3) (note 3)
renesas lsis 262144-bit (32768-word by 8-bit) cmos static ram m5m5256dfp,vp-55ll,-70ll, -70lli, -55xl,-70xl 6 write cycle ( /s control mode) t su (s) t rec (w) t h (d) t cw (note 5) (note 3) (note 3) t su (a) (note 4) t su (d) data in stable dq 1~8 /s /w a 0~14 note 3 : hatching indicates the state is "don't care". 5 : if /w goes low simultaneously with or prior to /s, the outputs remain in the high impedance state. 6 : don't apply inverted phase signal externally when dq pin is output mode. 4 : writing is executed in overlap of /s and /w low. 7 : ten, tdis are periodically sampled and are not 100% tested. (4) measurement conditions input pulse level .............. v ih =2.4v,v il =0.6v input rise and fall time ..... 5ns reference level ................ v oh =v ol =1.5v output load ...................... fig.1 cl=50pf (-55ll,-55xl ) cl=100pf (-70ll,-70lli,-70xl ) cl=5pf (for ten,tdis) transition is measured 500mv from steady state voltage. (for ten,tdis) vcc dq c l fig.1 output load 1.8k w 990 w (including scope and jig)
renesas lsis 262144-bit (32768-word by 8-bit) cmos static ram m5m5256dfp,vp-55ll,-70ll, -70lli, -55xl,-70xl 7 (3) power down characteristics /s control mode power down characteristics (1) electrical characteristics ( vcc=5v10%, unless otherwise noted) power down set up time power down recovery time (2) timing requirements ( vcc=5v10%, unless otherwise noted ) t su (pd) t rec (pd) symbol parameter ns max typ limits min test conditions unit 0 t cr ns 2.2v t su (pd) 4.5v 2.2v t rec (pd) /s > vcc - 0.2v vcc /s symbol parameter v v max typ limits min test conditions unit v 2 1 -xl vcc (pd) icc (pd) power down supply voltage power down supply current 2.2 v i (/s) chip select input /s -ll,-lli 4.5v 2.2v < v cc(pd) 2v< v cc(pd) < 2.2v v cc(pd) _ _ _ vcc = 3v, / s > vcc -0.2v, other inputs=0~vcc _ _ 0.2 a ~25 c 3 -ll,-lli 0.6 ~40 c -xl 10 -ll,-lli 2 ~70 c -xl -lli ~85 c 20 0.05
renesas lsis 262144-bit (32768-word by 8-bit) cmos static ram m5m5256dfp,vp-55ll,-70ll, -70lli, -55xl,-70xl rej03c0055 ? 2003 renesas technology corp. new publication, effective feb 2004. specifications subject to change without notice nippon bldg.,6-2,otemachi 2-chome,chiyoda-ku,tokyo,100-0004 japan these materials are intended as a reference to assist our customers in the selection of the renesas technology corporation product best suited to the customer's application; they do not convey any license under any intellectual property rights, or any other rights, belonging to renesas technology corporation or a third party. renesas technology corporation assumes no responsibility for any damage, or infringement of any third-party's rights, originating in the use of any product data, diagrams, charts, programs, algorithms, or circuit application examples contained in these materials. all information contained in these materials, including product data, diagrams, charts, programs and algorithms represents information on products at the time of publication of these materials, and are subject to change by renesas technology corporation without notice due to product improvements or other reasons. it is therefore recommended that customers contact renesas technology corporation or an authorized renesas technology corporation product distributor for the latest product information before purchasing a product listed herein. the information described here may contain technical inaccuracies or typographical errors. renesas technology corporation assumes no responsibility for any damage, liability, or other loss rising from these inaccuracies or errors. please also pay attention to information published by renesas technology corporation by various means, including the renesas technology corporation semiconductor home page (http://www.renesas.com). when using any or all of the information contained in these materials, including product data, diagrams, charts, programs, and algorithms, please be sure to evaluate all information as a total system before making a fi nal decision on the applicability of the information and products. renesas technology corporation assumes no responsibility for any damage, liability or other loss resulting from the information contained herein. renesas technology corporation semiconductors are not designed or manufactured for use in a device or system that is used under circumstances in which human life is potentially at stake. please contact renesas technology corporation or an authorized renesas technology corporation product distributor when considering the use of a product contained herein for any specific purposes, such as apparatus or systems for transportation, vehicular, medical, aero space, nuclear, or undersea repeater use. the prior written approval of renesas technology corporation is necessary to reprint or reproduce in whole or in part these materials. if these products or technologies are subject to the japanese export control restrictions, they must be exported under a license from the japanese government and cannot be imported into a country other than the approved destination. any diversion or reexport contrary to the export control laws and regulations of japan and/or the country of destination is prohibited. please contact renesas technology corporation for further details on these materials or the products contained therein. renesas technology corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. trouble with semiconductors may lead to personal injury, fire or property damage.remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of nonflammable material or (iii) prevention against any malfunction or mishap. notes regarding these materials keep safety first in your circuit designs!
|
